000			02206cam a2200349 a 4500
001			17134350
003			OSt
005			20150408114223.0
008			120125s2012 flua b 001 0 eng
010			_a 2012000323
020			_a9781439831526 (hardback)
040			_aDLC _cDLC _dDLC
042			_apcc
050	0	0	_aTK7871.85 _b.M3984 2012
082	0	0	_a660.2977 _223 _bMMD
084			_aSCI013000 _aSCI077000 _aTEC021000 _2bisacsh
100	1		_aMcCluskey, Matthew D. _946176
245	1	0	_aDopants and defects in semiconductors / _cMatthew D. McCluskey, Eugene E. Haller.
260			_aBoca Raton, FL : _bTaylor & Francis, _c2012.
300			_axx, 370 p. : _bill. ; _c26 cm.
504			_aIncludes bibliographical references and index.
520			_a"Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"--
650		0	_aSemiconductor doping. _946177
650		0	_aSemiconductors _xDefects. _946178
650		7	_aSCIENCE / Chemistry / General _2bisacsh. _940138
650		7	_aSCIENCE / Solid State Physics _2bisacsh. _946179
650		7	_aTECHNOLOGY & ENGINEERING / Material Science _2bisacsh. _940572
700	1		_aHaller, Eugene E. _946180
906			_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg
942			_2ddc _cBOOK
999			_c35544 _d270044