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  <titleInfo>
    <title>Dopants and defects in semiconductors</title>
  </titleInfo>
  <name type="personal">
    <namePart>McCluskey, Matthew D.</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <name type="personal">
    <namePart>Haller, Eugene E.</namePart>
  </name>
  <typeOfResource>text</typeOfResource>
  <genre authority="marc">bibliography</genre>
  <originInfo>
    <place>
      <placeTerm type="code" authority="marccountry">flu</placeTerm>
    </place>
    <place>
      <placeTerm type="text">Boca Raton, FL</placeTerm>
    </place>
    <publisher>Taylor &amp; Francis</publisher>
    <dateIssued>2012</dateIssued>
    <issuance>monographic</issuance>
  </originInfo>
  <language>
    <languageTerm authority="iso639-2b" type="code">eng</languageTerm>
  </language>
  <physicalDescription>
    <form authority="marcform">print</form>
    <extent>xx, 370 p. : ill. ; 26 cm.</extent>
  </physicalDescription>
  <abstract>"Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"--</abstract>
  <note type="statement of responsibility">Matthew D. McCluskey, Eugene E. Haller.</note>
  <note>Includes bibliographical references and index.</note>
  <subject authority="lcsh">
    <topic>Semiconductor doping</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Semiconductors</topic>
    <topic>Defects</topic>
  </subject>
  <subject authority="bisacsh.">
    <topic>SCIENCE / Chemistry / General</topic>
  </subject>
  <subject authority="bisacsh.">
    <topic>SCIENCE / Solid State Physics</topic>
  </subject>
  <subject authority="bisacsh.">
    <topic>TECHNOLOGY &amp; ENGINEERING / Material Science</topic>
  </subject>
  <classification authority="lcc">TK7871.85 .M3984 2012</classification>
  <classification authority="ddc" edition="23">660.2977 MMD</classification>
  <classification authority="bisacsh">SCI013000 SCI077000 TEC021000</classification>
  <identifier type="isbn">9781439831526 (hardback)</identifier>
  <identifier type="lccn">2012000323</identifier>
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    <recordCreationDate encoding="marc">120125</recordCreationDate>
    <recordChangeDate encoding="iso8601">20150408114223.0</recordChangeDate>
    <recordIdentifier source="OSt">17134350</recordIdentifier>
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